Microwave Journal's sample issue

TABLE I
SwITch TEchnoLogy compARISon

Switch
Technology
M/A-COM
Tech New
Nanosec
PHEMT
M/A-COM
Tech Std
PHEMT
M/A-COM
Tech Fast
Switch
PHEMT
Industry
PHEMT
Industry
SOS1

Industry SOS2

Industry
RF CMOS
Industry
SOI

Parameter
Units
Settling Time
(2%-98%)

ns

18. 4

284,000

109

<2000*

78

1650

30. 4

23. 4

Switching Speed (10%-90%)

ns

14

15

30

--

55

350

28.2

15. 4

Insertion Loss
dB

0.6

0.75

0.95

1.0

0.6

1.8

1.2

2.5

Isolation
dB

23

26

62

19

24. 5

40

22. 5

30

P-0.1dB
dBm

28. 5

26

20

38. 5

13#

33#

13

16

*Based on Datasheet Information; #P-1.0dB the overall switching speed of specific switches that were felt to be representative of different industry technologies and were purchased through commercially available distribution channels.

References

1. A.F. Basile, A. Mazzanti, E. Manzi-ni, G. Verzellesi, C. Canali, R. Piero-bon and C. Lanzieri, “Experimental and Numerical Analysis of Gate- and Drain-lag Phenomena in AlGaAs/InGaAs PHEMTs,” The 10th IEEE International Symposium on Electron Devices and Optoelectronic Applications, EDMO 2002, pp. 63-68.

2. S. Dhar, V.R. Balakrishman, V. Ku-mar and S. Ghosh, “Determination of Energetic Distribution of Interface States between Gate Metal and Semi-conductor in Sub-micron Devices from Current-voltage Characteristics,” IEEE Transactions on Electron Devices, Vol. 47, No. 2, February 2000, pp. 282-287.